生产国别厂家：日本，日本电子（JEOL）

主要技术指标：

1、加速电压：80KV，100KV，120 kV

2、TEM分辨率：点分辨率：0.38 nm，线分辨率：0.2 nm

3、STEM分辨率：2.0 nm

4、束斑尺寸：0.2-6μm

5、放大倍数：10倍~120万倍

基本原理: 利用高能电子束照射厚度不超过100纳米的薄的样品，电子与样品中的原子碰撞而改变方向，由于样品厚度、元素组成、晶体结构和缺陷等的不同，透过样品的电子会产生不同的花样或图像衬度，这些花样或图像包含了样品微观形貌结构的相关信息。

主要用途：主要用于材料的形貌、结构和缺陷的观察，也可进行物相的鉴定，包括晶胞参数的电子衍射测定。

Model: JEM-1400Plus

Manufacturer: JEOL, Japan

Main Specifications:

1. Accelerating Voltage: 80KV，100KV，120 kV

2. TEM Point Resolution：0.38 nm， Lattice Resolution: 0.2 nm

3.  STEM resolution: 2.0 nm

4. Spot size：0.2-6μm

5. TEM Magnification: 10~1200k

Principle: High-energy electron beam irradiate thin specimen (thickness no more than 100nm). Electrons collide with atoms of specimen and change directions. For the reason that different specimens have different thickness, element compositions, lattice structure and defects, transmitted electrons will generate different patterns or image contrasts, which contain specimen’s microstructure information and micromorphology information.

Main Application:  This instrument is mainly used for the observation of the morphology, structure and defects of materials, and also for the identification of phases, including the electron diffraction measurement of the unit cell parameters.